FIELD: physics, computer engineering.
SUBSTANCE: invention can be used as ternary content addressable memory. A magnetic random access memory (MRAM) cell includes a first tunnel barrier layer enclosed between a soft ferromagnetic layer, having free magnetisation, and a first hard ferromagnetic layer, having a first storage magnetisation; a second tunnel barrier layer enclosed between a soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetisation; wherein the first storage magnetisation can be freely oriented at a first high predetermined temperature threshold and the second storage magnetisation can be freely oriented at a second predetermined high temperature threshold; wherein the first high predetermined temperature threshold is higher than the second predetermined high temperature threshold.
EFFECT: enabling use of a MRAM cell as ternary content addressable memory (TCAM) with a smaller cell size.
15 cl, 2 dwg, 2 tbl
