FIELD: physics.
SUBSTANCE: invention relates to non-volatile ferroelectric memory devices and can be used in cell interrogation systems; the disclosed method is capable of detecting and eliminating reading errors. Method of ferroelectric memory differential cell logical state recording containing two storage elements with single ferroelectric layer in each of them, wherein these layers are polarized in opposite directions, includes operations in which a difference signal – the charge response – of the storage elements is detected, generated as a result of applying identical single reading pulses thereto, and it is determined on its basis whether the ferroelectric layers have reached the level of critical degradation leading to reading errors and whether they require restoration of polarization, at that, in the residual signal, selecting the information contribution generated in the reading pulse first half, completely including the leading edge; in the differential signal, a control contribution is selected, generated in the second half of the reading pulse, completely including the trailing edge; determining polarity and absolute value of information contribution; determining the control contribution polarity and absolute value; determining a logical state of the differential cell of the ferroelectric memory from the polarity of the information input; comparing polarities and absolute values of the information and control inputs and recording the reading error and the critical level of degradation if the information and control inputs have opposite polarities and the absolute value of the information input is less than the absolute value of the control input.
EFFECT: high reliability of storing and reading data in ferroelectric memory chips with a differential cell.
3 cl, 12 dwg, 2 tbl
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Authors
Dates
2025-05-16—Published
2024-09-17—Filed