FIELD: computer engineering.
SUBSTANCE: invention relates to computer engineering. Element of magnetoresistive random access memory (MRAM), suitable for thermal recording and self-referential reading operation, has magnetic tunnel junction having first and second parts, each part has layer for storing, reading layer and tunnel barrier layer; wherein magnetic tunnel junction further comprises antiferromagnetic layer between two layers of memorising, fixing storage magnetisation of every layer storage at low temperature threshold and releasing at high temperature threshold, so that during recording operation free magnetisation of each layer is capable of reading on magnetic saturation in accordance with direction of magnetic field recording at application of this field and storage magnetisation are capable for switching in the direction, in fact, parallel and corresponding to direction of saturated free magnetisations.
EFFECT: technical result consists in improvement of efficiency of heating the magnetic tunnel junction at minimisation of risks of breakdown and ageing tunnel barrier layers.
9 cl, 1 dwg
