METHOD FOR PRODUCING GRAPHENE Russian patent published in 2023 - IPC C01B32/186 B82Y40/00 

FIELD: nanotechnology.

SUBSTANCE: invention can be used in electronics, optics, automobile and aircraft manufacturing, as well as in medicine. First, a substrate is provided containing a material having a carbon solubility of at least 10^-6 at.% at the reaction temperature, such as a Boudoir reaction catalyst or a metal of at least 99.00% purity selected from Ni, Co, Fe, Pt, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, Ge and Zr, or an alloy of these metals in any combination. Optical fibre or porous material of complex shape can be used as a substrate. A gas containing carbon (II) monoxide is also provided, which may contain no more than 5 vol.% of compounds other than carbon (II) monoxide, for example hydrocarbons that are sources of carbon under the reaction conditions; or additionally contain an inert gas or a mixture of inert gases in an amount from 0 to 70 vol.%; or contain no more than 5 vol.% hydrogen. Gas and substrate are brought into contact at 900-1250°C and a pressure of at least 0.5 atm for a time of at least 1 minute to obtain graphene on the surface of the substrate. In one embodiment, the gas containing carbon (II) monoxide also contains a nucleation inhibitor selected from water vapor, oxygen, carbon monoxide (IV) and mixtures thereof in any combination. In another embodiment, the substrate is kept at a specified temperature before contact with the gas. The resulting graphene is single-layer and is characterized by an intensity ratio of the 2D to G peaks in its Raman spectrum of at least 2 and a ratio of the areas under the G and D peaks of no more than 0.02. The resulting graphene crystal has an area of at least 9 mm².

EFFECT: method for producing graphene is simple and suitable for scaling up and implementing on an industrial scale; it provides a high rate of production of high-quality graphene with a low number of defects.

23 cl, 17 dwg, 2 ex