METHOD OF PRODUCING A TWO-DIMENSIONAL MATERIAL Russian patent published in 2020 - IPC C30B25/10 C23C16/24 C23C16/26 C30B25/16 C30B29/02 C30B29/06 C30B29/60 

FIELD: manufacturing technology; technological processes.

SUBSTANCE: invention relates to production of two-dimensional crystalline material, such as graphene (versions) or other two-dimensional crystalline material, such as silicene, as well as obtaining a plurality of stacked layers of two-dimensional crystalline material, obtaining a heterostructure, heterostructure material containing two-dimensional crystalline material. Method of producing a two-dimensional crystalline material, e.g. graphene or other two-dimensional material, such as silicene, comprises heating a substrate held in a reaction chamber, to achieve temperature that is within range of decomposition of precursor and which provides formation of two-dimensional crystalline material from substance released from degradable precursor. Creation of steep temperature gradient (preferably> 1000 °C per meter), passing from surface of substrate towards inlet hole for precursor. Introduction of precursor through relatively cold inlet hole and along temperature gradient towards substrate surface. Steep temperature gradient ensures, that the precursor remains substantially cold until it approaches the surface of the substrate, which thus minimizes decomposition or other reaction of the precursor before it approaches the surface of the substrate. Separating gap between inlet hole for precursor and substrate is less than 100 mm.

EFFECT: invention enables to obtain a two-dimensional material, in particular graphene and silicene, of good quality (good quality of crystals, large grain size, minimum number of defects, large size of sheet, et cetera), which provides its successful use for production of semiconductor and dielectric materials.

45 cl, 6 dwg, 38 ex