FIELD: jewelry industry; optics; electronics.
SUBSTANCE: device 100 for growing single crystals contains a chamber 101, a crucible 102 located in a heated space 103, a valve 120 for regulating the pressure in the internal volume 104 intended for growing single crystals, as well as heating elements 119 for heating to 1350-1450°C, for example, RF or resistance heaters, or heat generators. The crucible 102 contains a bottom 105, side walls 106, an upper section 107, deposition sections D1-D7 spaced apart from each other and intended for attaching the seed crystal 108, as well as protrusions 109 spaced apart from each other, while the bottom 105 is free from the deposition sections D1 -D7. The crucible 102 may include at least one nozzle 110 for introducing reaction gas/liquid 111 towards sections D1-D7, as well as a column ejector element 112. The device may further comprise an insulating material 121 and a growth capacity enhancing device 117 selected from a plasma, microwave or laser source.
EFFECT: homogeneous atmosphere is provided, which allows the growth of large, high-quality single crystals.
18 cl, 4 dwg
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Authors
Dates
2024-01-30—Published
2019-11-19—Filed