PROCEDURE FOR MONOCRYSTAL SiC PRODUCTION Russian patent published in 2015 - IPC C30B23/00 C30B29/36 

FIELD: metallurgy.

SUBSTANCE: the procedure includes sublimation of the source SiC 5, located in the crucible, on the plate of seed crystal SiC 4 secured in holder 3, upon presence of gas directing screen 6 resting by bottom edge against the side internal surface of the crucible, with clearance h1 between its top edge and plate of the seed crystal SiC, and taking out of the grown monocrystal SiC from the internal cavity if the gas directing screen 6, at that the sublimation is performed in assembled crucible comprising top 2 and bottom 1 parts, between which a ring shoulder of the gas directing screen 6 is fixed, it is made as thin wall cylinder with wall thickness d1 1-3 mm, at least two slots 10 with width 0.05-1 mm through full its length, at height H2 of the thin wall cylinder of the gas directing screen exceeding the set height of the grown crystal by 1.5-2 times, clearance d2 between wall of the gas directing screen and internal wall of the top part of the crucible, at least over 0.5 mm, clearance h1 between the seed crystal and top edge of said screen 1-5 mm, and taking out of the grown crystal SiC from the crucible by vertical movement upwards of the holder 3 with crystal SiC grown on the seed plate 4 from the internal cavity of the gas directing screen 6, that stays fixed in the assembled crucible, keeping integrity of the crystal SiC and gas directing screen due to displacement of the segments of walls of the thin wall cylinder of the gas directing screen, separated by slots.

EFFECT: method increases labour capacity and production of the monocrystals with high degree of structural efficiency, reduces materials consumption of the method and its labour intensity.

3 dwg, 1 tbl