FIELD: processes and devices for growing optical crystals designed for optic-electronic apparatuses.
SUBSTANCE: device includes housing with growing chamber and with cooling chamber mutually divided by means of ceramic partition, crucible arranged in growing chamber, induction heater, upper metallic heating shield mounted over crucible, mechanism with rod for moving crystal. Crucible is in the form of cylinder whose flat bottom is joined with cylindrical lateral surface along spherical surface. Metallic upper shield has two sections, lower cone section and upper spherical section. Between chamber for growing and chamber for cooling diaphragm with changeable concentric inserts is arranged. Induced Foucault current detector in the form of cylinder is mounted on bottom part of crucible. Inner diameter of any concentric insert of said diaphragm exceeds by 2 - 16 mm diameter of grown crystal. Concentric inserts of diaphragm are made of crucible material. Relation of height of cylindrical wall of crucible to height of wall of induced Foucault current detector is in range 2 - 10. Relation of height of cone section of upper metallic shield to height of spherical section of said shield is in range 2 - 5. Apparatus allows grow large-size (with diameter and length more than 100 mm) oxide crystals (LiNbO3, LiTaO3 and others) of high optical quality and excellent structure quality.
EFFECT: possibility for growing mono-crystals with improved optical properties and enhanced structure.
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Authors
Dates
2008-03-27—Published
2006-06-01—Filed