METHOD FOR PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2024 - IPC H01L21/36 C30B23/02 C30B29/36 

FIELD: microelectronics.

SUBSTANCE: invention can be used in the manufacture of integrated circuits. The method for producing monocrystalline SiC involves sublimation of a source of silicon carbide - silicon carbide powder - onto a plate of a seed SiC single crystal with a diameter of D in a growth crucible, in the upper part of which a graphite shaper is placed. In the lower part of the growth crucible, a cylindrical insert made of dense graphite with a high thermal conductivity value of radius R is placed, in which vertical holes are made designed to accommodate silicon carbide powder, and the gaps between the holes have dimensions d2 such that d2≥0.1R, and the total cross-sectional area of all holes is at least 40% of the end area of the cylindrical insert, while the distance H between the upper surface of the cylindrical insert and the plate of the seed single crystal is such that d1 < H < D.

EFFECT: invention makes it possible to improve the quality of monocrystalline SiC ingots while reducing the cost of the method.

3 cl, 6 dwg, 1 tbl