HIGH-FREQUENCY KEY CASCADE BIAS CIRCUIT WITH HIGH-SPEED AMPLITUDE-SHIFT KEYING Russian patent published in 2024 - IPC H03C1/00 

FIELD: high-frequency radio engineering.

SUBSTANCE: invention relates to high-frequency (HF) radio engineering. High-frequency key stage bias circuit with high-speed amplitude-shift keying comprises high-frequency (HF) stage and pulse modulation inputs, push-pull field transistor LDMOSFET driver, input HF transformer T1, power HF transistor LDMOSFET VT1, output HF transformer T2, power filter choke L1, HF output of cascade K4, circuit R1C1, connected in parallel to middle point of secondary winding of input HF transformer T1, connected to gates of power HF transistor LDMOSFET VT1, as well as diodes VD1, VD2, together with capacitor C1, forming a positive half-wave detector, and inputs of the HF cascade and pulse modulation through the push-pull field transistor LDMOSFET driver are connected to the primary winding of the input HF transformer, arms of the power HF transistor LDMOSFET VT1 are connected to the primary winding of the output HF transformer T2, and to the middle point of the primary winding of the output HF transformer T2 the supply filter choke L1 is connected.

EFFECT: preservation of time of decay of trailing edge of radio pulse initially high and complete elimination of overshoot on drains of power high-frequency (HF) transistor.

1 cl, 4 dwg