PHOTODETECTOR Russian patent published in 2024 - IPC G01J1/44 H01L31/02 

FIELD: semiconductors.

SUBSTANCE: semiconductor optoelectronics and photodetector. The photodetector is made in the form of an integrated circuit and contains a photodiode connected to the input of a photocurrent-to-voltage conversion circuit A1 and an amplification circuit A2. The photosensitive area of the photodiode is made in the form of a hexagon with a shape close to a circle. The circuit for converting photocurrent into voltage A1 is made according to the modified “current pair” version and is supplemented with a parallel-connected low-pass filter and feedback resistor. The A2 amplification circuit is designed as an “extended current pair” with an inverting amplifier and a low-impedance output. The output of the photocurrent-to-voltage conversion circuit A1 and one of the outputs of the amplification circuit A2 are connected to an external isolation capacitor, and its second output is connected to an external device.

EFFECT: reducing the influence of electromagnetic interference and increasing protection from constant and modulated solar illumination at the system input, increasing pulse voltage sensitivity, improving the signal-to-noise ratio, increasing the reliability of the device, increasing its service life, and reducing weight and size characteristics.

1 cl, 2 dwg