METHOD OF CREATING HIGH-ASPECT EXTENDED STRUCTURES WITH DIAMETERS OF SUBMICRON DIMENSIONS IN DIELECTRIC CRYSTAL BY FEMTOSECOND X-RAY PULSES Russian patent published in 2024 - IPC H01L21/268 B23K26/55 B82Y20/00 B82Y40/00 

FIELD: nanotechnology.

SUBSTANCE: invention relates to nanotechnologies and microstructural technologies. Method of creating extended cavities with diameters of submicron dimensions in a LiF crystal using coherent X-ray pulses consists in piercing a hole in the LiF crystal using a laser method by aiming a focal spot on the surface of the crystal and moving this spot with micron accuracy on the surface of the crystal, wherein to obtain deep cavities with diameters of submicron sizes in a LiF crystal, coherent femtosecond (20 fs) X-ray pulses with a photon wavelength are used λ equal to 1.3776 Å, at which the attenuation length in the LiF structure is equal to 475 mcm.

EFFECT: invention enables to simplify the method of creating extended cavities of submicron diameter with aspect ratio of order of 1:1800 in a LiF crystal for producing photonic crystals and photonic waveguides.

1 cl, 4 dwg, 1 ex