METHOD FOR CONTROLLING COMPOSITION OF MELT IN ACTIVE ZONE OF THERMAL CHAMBER OF CRYSTALLIZATION PLANT Russian patent published in 2024 - IPC C30B11/00 C30B13/16 C30B13/28 C30B30/02 

FIELD: growing crystals.

SUBSTANCE: invention can be used in growing oxide single crystals, such as sapphire or garnet. The device contains body 1 of a crystallization unit, inside of which dielectric gasket 3 is placed on drag 2 with crystallization container 4 installed on it, filled with a charge. The electric field of the thermal chamber core is controlled by melt composition control device 7. The charge and then melt 5 are heated using resistive heater 6. At temperatures above 1700°C, in the time interval T1, a negative potential is applied to heater 6, and a positive potential is applied to container 4 to create a directed accelerated flow of electrons inside the chamber and ionize the evaporation products of the charge. Then, in time interval T2, a negative potential is applied to container 4, and a positive potential is applied to heater 6 in order to ensure the movement of neutral atoms and molecules ionized in time interval T1 to cations under the influence of an electrostatic field in the direction from heater 6 to container 4 and their return to melt 5. The duration of T2 period is more than 10³ T1.

EFFECT: invention makes it possible to control the composition of the melt in order to increase the concentration of alloying impurities and the size of the resulting crystals.

1 cl, 5 dwg