FACILITY FOR GROWING OF SINGLE CRYSTALS BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTRFACE (SOLID-MELT HEATER) WITH OVERPRESSURE OF GAS IN GROWING VESSEL Russian patent published in 2009 - IPC C30B11/00 C30B13/18 

FIELD: metallurgy, crystals.

SUBSTANCE: invention relates to growing from single crystals melt in temperature gradient with usage of heating element, immersed into molten zone. Facility contains growing vessel, furnace with combination background heater 11, capsule 4 on the basis 3, connected to the bottom rod 1, additional heater, immersed into melt inside the solid-melt interface(solid-melt heater) 7, connected to top rod 2, waterproof taken out from the chamber by means of withdrawal unit 10, thermocouple T1 and T2 in the body of solid-melt heater, T3 and T4 in support and T5-T8 nearby the section of background heater. Withdrawal unit 10 contains axis 9, fixedly connected to top rod 2, spring, connected to its bottom end with axis and implemented with the ability of pressure as the pressure increases in the chamber and movement lengthways the mentioned axis with the rod upwards, at that withdrawal unit 10 contains screwed on its body nut, restricting spring from the top side and indicated micrometre, rigid relative to body of withdrawal unit and indicating relocation bias of solid-melt heater inside the growing vessel lengthwise its axis before and during the crystallisation. Invention provides assure the control of melt temperature and to create optimal temperature field in growing crystal, including close to flat shape of solid-melt interface.

EFFECT: improvement of "А²Б⁶" compound semiconductor ensured by reduction of tensity in crystal and, as consequence, excluding fissuring, reduction of twinning and dislocation content in crystal, and also increasing of yield.

11 cl, 2 ex, 1 dwg