THERMAL NODE OF INSTALLATION FOR HALOGEN CRYSTALS GROWING BY HORIZONTAL UNIDIRECTIONAL CRYSTALLIZATION METHOD Russian patent published in 2018 - IPC C30B11/00 C30B29/12 C30B35/00 H05B3/20 

FIELD: chemistry.

SUBSTANCE: invention relates to the field of technology, related to growing crystals from melts by horizontal unidirectional solidification (HUS), which are widely used as scintillators for ionizing radiation detectors, laser crystals and optical elements, working in a wide range of wavelengths from ultraviolet to infrared wavelengths. A thermal node of an installation for halogen crystals growing by horizontal unidirectional crystallization method is proposed, consisting of a housing inside which central and separate carbon-graphite heat-insulating modules are housed, a graphite container 9 with a set of thermal shields and a frame mounted movably horizontally within the heat insulating modules, a L-shaped upper heater 2 and a U-shaped lower heater 3 located inside the central heat-insulating module, a viewing window 8. The central heat-insulating module is made collapsible and consists of an external graphite heat-insulating casing 4, inside which diaphragms 7, upper 5 and lower 6 sections of internal graphite thermal shields are located, and individual carbon-graphite heat-insulating modules are made in the form of an internal graphite casing surrounded by external collapsible graphite heat insulating cassettes, each consisting of stacked thermal shields, with spacers laid in-between.

EFFECT: increased technological design of the thermal node, which allows to vary the magnitude of the temperature gradient in the crystal active growth zone, resulting in an optically homogeneous crystal.

5 cl, 8 dwg