POWER AMPLIFIER Russian patent published in 2024 - IPC H03F3/04 

FIELD: radio engineering.

SUBSTANCE: power amplifier consists of three transistors 57-59, which together with elements for setting modes and matching and decoupling circuits form two parallel-connected microwave channels – main and secondary. With respect to the input and output of the device, transistors 57 and 58 of the main channel are connected according to the common emitter-common emitter (CE-CE) scheme, and in the secondary channel on transistors 57 and 59 a cascode circuit of the common collector-common base (CC-CB) type is implemented. Summation of oscillation powers arriving with the same phase contributes to equalization of amplitude-frequency characteristics in the frequency range, where the cascade with a common base operates effectively, and the amplification of cascades with a common emitter drops sharply. Such combination takes place under the condition that the imaginary parts of their input reactivities measured at the input and output of each of the channels have the same values, but with different signs, which contributes to broadband two-way matching of the amplifier.

EFFECT: reduced frequency non-uniformity of the gain at wideband two-way matching of the device with standard circuits.

1 cl, 11 dwg