POWER AMPLIFIER Russian patent published in 2023 - IPC H03F3/04 

Abstract RU 2796545 C1

FIELD: radio engineering.

SUBSTANCE: used in transceiver equipment operating at frequencies, including the microwave range. For this, the power amplifier consists of two microwave transistors 78 and 79, connected according to the Darlington circuit, a direct current control transistor of reverse conductivity 80, seven resistors 81-87, which provide the mode of operation of the microwave transistors by direct current, as well as the input 88 and output 89 matching circuits. The values of the main elements and parameters of the amplifier circuit are matched by the relation:

where a is the coefficient of proportionality between the collector and base Ud voltage of the control transistor 80; Ib1 is DC component of the base current of the transistor 78; Ueb (T0) is voltage transition “emitter-base” of the control transistor 80 at ambient temperature T=T0=20°C; R1, R2 and R3 are the values of the resistive elements 84, 85 and 86, respectively.

EFFECT: reduction in energy consumption (or power consumption) with temperature stabilization of the transmission coefficient of power amplifiers.

1 cl, 7 dwg

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RU 2 796 545 C1

Authors

Baranov Aleksandr Vladimirovich

Dates

2023-05-25Published

2023-01-26Filed