MAGNETORESISTANCE SENSOR BASED ON NON-MAGNETIC SEMICONDUCTOR MATERIAL Russian patent published in 2024 - IPC G01R33/09 

FIELD: instrumentation.

SUBSTANCE: magnetoresistance sensor based on non-magnetic semiconductor material consists of a thin semiconductor film and two metal contacts to it, wherein the film is made in the form of a flat ring with a cutout in the form of a segment with an apex angle greater than zero, but not exceeding 60 degrees, the ratio of the outer and inner radii of the ring is not more than 1.1, wherein one metal contact adjoins the ring outer side along the entire length of the arc, while the second contact passes through the cutout and adjoins the ring inner side along the entire length of the arc.

EFFECT: increasing magnetoresistance of the device up to maximum values observed in Corbino disks based on this material, while maintaining the planar geometry of the device.

3 cl, 4 dwg