TUNNEL MAGNETORESISTIVE ELEMENT Russian patent published in 2010 - IPC H01L43/08 

FIELD: physics, semiconductors.

SUBSTANCE: tunnel magnetoresistive element relates to microelectronics and specifically to spintronic hardware components - a new area in development of modern electronics, since its operation employs a spin-dependant electron transport mechanism and can be used in making conceptually new elements designed for storing, processing and transmitting information. In the tunnel magnetoresistive element which has a substrate with two ferromagnetic conducting layers separated by a thin dielectric layer, current contacts are attached to the top ferromagnetic layer of the structure whose conductivity is less than conductivity of the bottom layer and the magnetoresistive effect is realised by switching the current channel between layers with different conductivity controlled by effect of the magnetic field on magnetic tunnel junctions under the current contacts.

EFFECT: invention enables realisation of a large amount of magnetoresistive (MR) effect in a tunnel structure using current in plane (CEP) geometry when current is parallel the plane of interfaces of the layered structure and possibility of efficiently controlling the value of MR effect using bias current flowing through the current.

5 dwg, 1 ex