FIELD: radio engineering, communication.
SUBSTANCE: sensitive element based on magnetoimpedance effect includes non-magnetic substrate, dielectric layer and contacts and has SRS geometry where the substrate is n-Si, the dielectric is SiO2 and metal electrodes in the form of strips applied on SiO2 and lower part of n-Si semiconductor, and the magnetoimpedance behaviour is explained by processes of recharge of surface states on the boundary dielectric/semiconductor at the alternating voltage applied to the structure.
EFFECT: possibility of achievement of large value of Mie effect in MIS structure when using SRS geometry.
4 dwg
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