FIELD: electronic equipment.
SUBSTANCE: invention relates to electronic engineering, in particular, to preparation of fluoroplastic surface for metallization. Method of preparing the surface of fluoroplastic for applying a copper layer involves treating its surface at 80-85 °C in Dash etching solution (HF : HNO3 : CH3COOH = 1:3:1) with washing with distilled water 60-70 °C, treatment in 10 % tin (II) chloride solution SnCl2 , followed by washing with distilled water with temperature of 40-50 °C, subsequent treatment in 1 M solution of thiourea (NH2)2CS at room temperature and chemical deposition of a conducting layer of Cu2S in a preliminary prepared reaction mixture containing 3×10-2 mol/l CuSO4, 2.0 mol/l CH3COONa, 1.6×10-2 mol/l (NH2)2CS, for 60-120 min at pH 5.35-5.40 and process temperature 80 °C. During subsequent application of copper layer with thickness of about 30 mcm by galvanic method on prepared surface of fluoroplastic, the measured adhesion strength of its adhesion to fluoroplastic was equal to 1.4-1.8 kg/cm.
EFFECT: high reliability and quality of articles on fluoroplastic substrates.
1 cl, 5 ex
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Authors
Dates
2024-11-05—Published
2024-04-18—Filed