FLUOROPLASTIC SUBSTRATE METALLIZATION DEPOSITION METHOD Russian patent published in 1994 - IPC

Abstract RU 2020777 C1

FIELD: microelectronics; production of HF and microwave range integrated circuits. SUBSTANCE: method involves cleaning of substrate in organic solvent, its treating in glow discharge, and sequential application of adhesive coating onto substrate in two stages and then main metallization layer. EFFECT: improved metallization deposition quality due to application of adhesive layer by disintegrating metal-organic compound in HF-discharge plasma in two stages at definite conditions on each stage. 2 tbl

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RU 2 020 777 C1

Authors

Zakharov V.R.

Rostova G.S.

Dodonov V.А.

Тitov V.А.

Dates

1994-09-30—Published

1991-07-03—Filed