FIELD: chemistry.
SUBSTANCE: invention relates to preparation of sitall surface prior to chemical application of copper film or semiconductor coating of lead sulphide or cadmium sulphide. Sitall surface is etched with 5-10 vol.% aqueous solution of hydrofluoric acid for 1-20 minutes at room temperature. Then, sitall surface is activated with 0.02 M aqueous solution of silver nitrate at temperature of 60 °C for 15-20 minutes.
EFFECT: uniform chemical application of copper and semiconductor coatings by non-destructive for sitall method with high adhesion of the film to the ceramic base.
1 cl, 6 ex
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