METHOD OF PRODUCING TIN-DOPED INDIUM OXIDE WITHOUT CONTAMINATION WITH CHLORIDE IONS Russian patent published in 2025 - IPC C01G15/00 H01L21/288 

FIELD: chemistry.

SUBSTANCE: invention relates to general chemical technology and can be used to produce, for example, magnetron sputtering targets used to deposit thin films in making solar batteries, liquid crystal screens and other electronic devices. Method of producing tin-doped indium oxide without chloride contamination by coprecipitation involves preparing a solution of salts of metals of indium (III) and tin (IV), bringing it to pH 7 by adding ammonia, filtering the precipitate, according to the invention, to achieve doping degree of tin oxide in indium oxide of 2-20%, 4.5-aqueous indium nitrate (III) and anhydrous tin (IV) acetate are used at a weight ratio of indium nitrate : tin acetate, respectively, of 7.5:1 to 88:1, and calcination is carried out at temperature of 650-1400 °C.

EFFECT: invention enables to obtain tin-doped indium oxide without contamination with chlorides.

1 cl, 3 ex