FIELD: measuring.
SUBSTANCE: invention relates to measuring properties of semiconductors and can be used to determine the weight fraction of Bi in thin layers of a chalcogenide system (As2Se3)100-xBix. Frequency dependence of the tangent of the angle of dielectric losses tgδ investigated layers in the region of low frequencies. Positions of maxima of dielectric losses are selected. Relaxation time values are obtained τmax and the percentage of Bi is determined from the calibration dependence of the percentage of Bi on the relaxation time τmax.
EFFECT: sample simplification and absence of its destruction.
1 cl, 3 dwg
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