METHOD OF CONTROLLING PARALLEL CONNECTED POWER IGBT-TRANSISTORS AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2025 - IPC H02M1/88 H03K17/16 

FIELD: electrical engineering.

SUBSTANCE: invention relates to electrical engineering and can be used in power converters, in which parallel connection of two or more IGBT transistors is used. Disclosed is a method of controlling parallel connected power IGBT transistors, at which the emitter current-carrying bus and a pair of conductors connected to the control outputs of the IGBT transistors are combined into a magnetically coupled circuit, simulating an air transformer with a transformation ratio equal to 1. Due to this, EMF induction in a pair of conductors is provided at the moments of switching of IGBT transistors, which is directed oppositely and is subtracted from the induced EMF in the emitter current-conducting bus, which is caused by the current change. Device for implementation of the method represents a current-carrying bus, which inside contains a hole along its length for laying of pairs of conductors isolated from each other.

EFFECT: improving operability of converters, which include parallel connection of IGBT-transistors.

2 cl, 2 dwg