SOFTWARE AND HARDWARE SOLUTIONS FOR MANAGING IGBT MODULES BASED ON DRIVER ON MICROCONTROLLER Russian patent published in 2021 - IPC H02M1/00 H02M3/155 

FIELD: power modules.

SUBSTANCE: invention relates to power modules based on bipolar transistors with an isolated gate. The transistor buffer creates the necessary current iG to recharge the gate capacity G. The additional circuit measures the voltage VEe, proportional to the current iC, released on the inductance LE and the resistance RE of the emitter output of the transistor. This VEe voltage is involved in the measurement of the collector current and in the formation of an error signal: a large emitter current. Also, the VEe is fed to the operational amplifier (OA), closing the current feedback. This is a safe current mode circuit: the more iC current, the less is the control signal at the gate. The second circuit of the safe mode is by voltage. The collector voltage Uc is fed to the OA through the differential circuit Cv, closing the feedback on the change in the voltage Uc. A rapid increase in voltage (usually when switched off) causes an increase in the gate voltage, tightening the front of the collector voltage growth Uc, while the piecewise linear approximation of the transistor model describes the saturation voltage as: Usat=Vo+(Ro+Temperature/K)*Ic, and the crystal temperature is calculated according to the dependence: Temperature = ((Usat-Vo)/Ic-Ro)*K+To.

EFFECT: expanding the arsenal of means for registering data on the operating mode of IGBT modules for generating signals for correcting the operating mode through a piecewise linear approximation of the transistor model when calculating the temperature, while the driver circuit is implemented in a controller that creates a reference Vref voltage for an operational amplifier that creates a control voltage at the gate of the transistor G.

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