HARDWARE-SOFTWARE METHODS FOR PREDICTING CRITICAL STATES OF TRANSISTORS IN FREQUENCY CONVERTER Russian patent published in 2021 - IPC G05F1/46 H02M1/08 

FIELD: semiconductor technology.

SUBSTANCE: invention relates to power modules based on bipolar transistors with an insulated gate. The transistor buffer creates the necessary current i_G to recharge the gate capacity G. The additional circuit measures the voltage V_Ee, proportional to the current i_C, released on the inductance L_E and the resistance R_E of the emitter output of the transistor. This V_Ee voltage is involved in the measurement of the collector current and in the formation of a signal for predicting the critical states of transistors in the frequency converter. Also, V_Ee is fed to the operational amplifier (op amp), closing the current feedback. This is a circuit for predicting critical states of the mode: more i_C current means a weaker control signal at the gate. The second circuit is based on voltage. The collector voltage Uc is fed to the op amp through the differential circuit C_v, closing the feedback on the change in the voltage Uc. A rapid increase in voltage (usually when switching off) causes an increase in the gate voltage, tightening the front of the collector voltage growth Uc.

EFFECT: expansion of the arsenal of tools for predicting critical states of transistors in a frequency converter, while the driver circuit is implemented in a controller that creates a reference v_ref voltage for an operational amplifier that creates a control voltage at the gate of the transistor G.

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