FIELD: electronics. SUBSTANCE: silicon-plate is cut into crystals which are fired in vacuum in three stages. At first stage they are fired at 800 C for the course of 2 h, at second stage - at 1200 C for the course of 2 h and at third stage - at 800 C for the course of 2 h. Fired crystals are chemically polished. The rectifying and ohmic contacts are deposited. EFFECT: facilitated manufacture.
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MAKING PHOTOVOLTAIC CELL | 2008 |
|
RU2392694C2 |
| METHOD FOR DETECTING STRUCTURAL DEFECTS IN SILICON CRYSTALS | 1996 |
|
RU2120683C1 |
| METHOD FOR DETECTING STRUCTURAL DEFECTS IN SINGLE CHIPS | 1998 |
|
RU2151445C1 |
| METHOD OF MAKING SHORT-RANGE PARTICLE DETECTOR | 2008 |
|
RU2378738C1 |
| METHOD OF DETECTION OF STRUCTURAL DEFECTS IN SILICON CRYSTALS | 1996 |
|
RU2110116C1 |
| METHOD TO MANUFACTURE SCHOTTKY DIODE | 2011 |
|
RU2488912C2 |
| METHOD OF DIAGNOSIS OF STRUCTURAL CLEANNESS OF MONOCRYSTALS OF N TYPE SILICON GROWN BY ZONE MELTING | 1991 |
|
RU2064713C1 |
| SEMICONDUCTOR CRYSTAL WELDING PROCESS | 1990 |
|
RU2042232C1 |
| METHOD OF DETECTING ETCHING DISLOCATION PITS ON THE SURFACE OF MONOCRYSTALLINE GALLIUM ARSENIDE PLATES | 2024 |
|
RU2837607C1 |
| METHOD FOR MAKING DEFORMED HALF-PRODUCTS FROM TITANIUM CHIPS | 1992 |
|
RU2048268C1 |
