METHOD OF TEST OF THERMAL STABILITY OF HOMOGENEOUS CURRENT DISTRIBUTION UNDER PULSE MODES OF OPERATION OF HIGH-POWER BIPOLAR TRANSISTORS Russian patent published in 1996 - IPC

FIELD: electronics. SUBSTANCE: invention is intended for increase of authenticity of test of thermal stability of homogeneous current distribution under pulse modes of operation of high-power bipolar transistors which is achieved thanks to monitoring of steepness of dependence of voltage between emitter and base leads on voltage between collector and base leads for specified amplitude of pulse of emitter current corresponding to examined pulse mode of operation. Thermal stability of homogeneous current distribution under various pulse modes is controlled by measured values of these voltages. Given method can also be used for unspecified form of pulses of emitter current. EFFECT: increased authenticity of test of thermal stability of homogeneous current distribution under pulse modes. 2 dwg, 1 tbl