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1 662 306

(13)

A1

(51)

IPC

(21) (22)

Application

4682684/35, 1989-02-13

(22)

Actual filing date

1989-02-13

(45)

Published

1994-09-30

(72)

Inventor

Veligura G.А.Vyglovskij V.М.Кosoj А.Ja.

HEAVY-POWER MULTIEMITTER MICROWAVE TRANSISTOR Russian patent published in 1994 - IPC

Abstract SU 1662306 A1

FIELD: microelectronics. SUBSTANCE: thin-film ballast resistors of emitters are made of films CoSi2 or VSi2 whose value is determined from equation given in description of invention. EFFECT: improved output power, stability and reliability under working conditions due to better current-stabilizing properties of resistors. 2 dwg

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SU 1 662 306 A1

Authors

Veligura G.А.

Vyglovskij V.М.

Кosoj А.Ja.

Dates

1994-09-30—Published

1989-02-13—Filed

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