METHOD FOR CLASSIFICATION OF TRANSISTORS WITH RESPECT TO LEAKAGE CURRENT LEVELS Russian patent published in 1997 - IPC

FIELD: radio engineering. SUBSTANCE: method involves running emitter current through direct-bias emitter-base p-n junction when collector and base are short-circuited, running collector current through direct-bias collector-base junction when emitter and base are connected to common line. Application of direct collector-base voltage is performed by means of pulse series which relative pulse duration is greater than 10 and pulse duration 3• 10 sec, amplitude which provides density of emitter current is greater than 2• 10 A per square cm. During third stage, procedure of first stage is repeated and base currents in range of 10 -10 A for first and third stages are compared. Tested transistors are judged fault if base current is increased by more than 10%. EFFECT: increased functional capabilities. 4 dwg