REVERSIBLY CONTROLLED SEMICONDUCTOR DEVICE Russian patent published in 1994 - IPC

Abstract RU 2006992 C1

FIELD: semiconductor measurement technology. SUBSTANCE: sections with concentration of dope exceeding by not less than one order of magnitude concentration of dope in basic layer of same type of conductance are implanted into semiconductor structure of basic layer at boundary with emitter layer. In this case lateral dimension of these sections, distances between them and their depth meet a number of relationships specified in description of invention. EFFECT: reduced pumping power of circuit with commutation of heavy currents. 4 dwg

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RU 2 006 992 C1

Authors

Grekhov I.V.

Gorbatjuk A.V.

Kostina L.S.

Dates

1994-01-30—Published

1986-07-18—Filed