FIELD: measurement technology. SUBSTANCE: converter has restoring silicon element and resistance strain element positioned on it. Resistance strain element is manufactured in the form of drift two-collector strain transistor of p or n type. Longitudinal axis of resistance strain element of p type forms angle of 45 deg with direction "100" of restoring element and of element of n type coincides with direction "100". Arrangement of resistance strain elements on restoring elements of round, square and rectangular shape is given in description of invention. Resistance strain element includes first doped area in restoring element, two limit contacts, two side current taps (collectors) and second additional doped area. Current taps and additional doped area (emitter) have conductance type opposite to that of first area. EFFECT: increased sensitivity. 17 dwg
Title | Year | Author | Number |
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0 |
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SU1783331A1 | |
INTEGRATED PRESSURE TRANSDUCER | 0 |
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INTEGRATED STRAIN TRANSDUCER AND METHOD OF ITS MANUFACTURE | 0 |
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INTEGRATED STRAIN CONVERTER | 1988 |
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INTEGRATED STRAIN TRANSDUCER AND METHOD OF ITS MANUFACTURE | 0 |
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SU1827531A1 |
Authors
Dates
1994-02-28—Published
1985-11-05—Filed