INTEGRATED STRAIN CONVERTER Russian patent published in 1994 - IPC

FIELD: measurement technology. SUBSTANCE: integrated strain converter has crystal produced from silicon in the form of homogeneous semiconductor film deposited on surface of elastic element. Nine electric contacts and metallization tracks are located on film. Contacts are arranged in central symmetry with respect to one of eight directions. First four contacts are located equidistantly from central contact along mutually perpendicular directions of maximal strain sensitivity of film. Remaining four contacts are also placed equidistantly from central contact along directions making angle of 45 deg with directions of maximal strain sensitivity of film. Distance from central contact to any contact of the first four contacts amounts to 0.15-0.3 of distance from central contact to any contact of the second four contacts. Integrated strain converter is manufactured in compliance with standard production technology. EFFECT: increased sensitivity of converter. 4 dwg