STRAIN-GAGE PRESSURE TRANSDUCER Russian patent published in 2004 - IPC

Abstract RU 2243517 C2

FIELD: measurement technology; measuring pressure of liquids and gases.

SUBSTANCE: proposed strain-gage pressure transducer has supporting base and rectangular single-crystalline silicon diaphragm with dielectric substrate and four strain-gage resistors of which two ones are transversal and two other are longitudinal relative to symmetry axis of diaphragm. Rectangular islands of non-doped semiconductor material carrying strain-gage resistors are formed on dielectric substrate surface.

EFFECT: enhanced sensitivity (output signal) of strain-gage pressure transducer.

1 cl, 2 dwg

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RU 2 243 517 C2

Authors

Gridchin V.A.

Grishchenko V.V.

Ljubimskij V.M.

Shaporin A.V.

Dates

2004-12-27—Published

2002-06-11—Filed