FIELD: measurement technology. SUBSTANCE: integral tensoconverter has homogeneous semiconductor film applied to entire surface of restoring element and electric contacts to film. Electric contacts are arranged in rows along direction of maximal tensosensitivity of film in nodes of hypothetical orthogonal grid with square meshes. Tensoconverter has not less than three rows of contacts and three contacts in row. Direction of rows of contacts for silicon film which surface matches plane <100> and restoring element in the form of rectangular membrane is parallel to nearest sealing line of membrane and makes up angle of 45 deg with direction <100> with use of film of p type and is parallel or perpendicular to direction <100> with use of film of n type. In tensoconverter there is used bridge circuit connection with different versions of integration of contacts to pick off signal. EFFECT: increased sensitivity and reduced value and temperature drift of unbalance. 14 dwg
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Authors
Dates
1994-02-28—Published
1987-04-23—Filed