FIELD: measurement technology. SUBSTANCE: converter is silicon monocrystal 1 with membrane 2 formed in it by method of anisotropic etching. In peripheral regions of membrane 2 there are located resistance strain gauges R1-R4 formed by successive connection of resistive strips 3 and 4 placed inside region limited by curve of equal relative changes of resistances. Under action of pressure deformations taken up by resistance strain gauges R -R4 connected in bridge circuit emerge in membrane 2. EFFECT: enhanced sensitivity of converter. 3 dwg
Title | Year | Author | Number |
---|---|---|---|
INTEGRAL PRESSURE CONVERTER | 1987 |
|
SU1433172A1 |
INTEGRAL TRANSDUCER OF PRESSURE | 0 |
|
SU1515082A1 |
INTEGRAL PRESSURE TRANSDUCER | 0 |
|
SU1425487A1 |
INTEGRATED PRESSURE TRANSDUCER | 0 |
|
SU1580190A1 |
STRAIN-MEASURING PRESSURE TRANSDUCER | 0 |
|
SU1394074A1 |
SEMICONDUCTOR PRESSURE TRANSDUCER | 1992 |
|
RU2080573C1 |
INTEGRATED PRESSURE TRANSDUCER | 0 |
|
SU1749731A1 |
SEMICONDUCTOR PRESSURE TRANSDUCER | 1993 |
|
RU2047113C1 |
INTEGRAL ACCELERATION TENSOTRANSDUCER | 2012 |
|
RU2504866C1 |
INTEGRAL PRESSURE TRANSDUCER | 0 |
|
SU1075096A1 |
Authors
Dates
1995-12-10—Published
1986-11-24—Filed