THYRISTOR CONTROL METHOD Russian patent published in 1997 - IPC

FIELD: semiconductor equipment. SUBSTANCE: according to proposed method thyristor is manufactured in the from of hollow cylinder with semiconductor layers and electrodes placed coaxially, surplus charge is formed in base regions. Control current is induced in electrodes and external semiconductor layers fabricated in the form of helical strips with the use of inductor. Inductor provides for change of magnetic field in compliance with expression given in formula of invention. EFFECT: simplified control circuit due to resistive decoupling in control circuit, reduced cut-off time. 1 dwg