SEMICONDUCTOR DEVICE Russian patent published in 1997 - IPC

FIELD: semiconductor electronics. SUBSTANCE: device has semiconductor structure in the form of hollow cylinder with coaxially arranged p-n junctions. Longitudinal grooves on structure surface crossing p-n junctions divide semiconductor structure into separate sections. Each section functions as digital unit, and device proper performs functions of group of digital units having common point in electric circuit. Input and output parts of device are electrically isolated by means of annular groove on structure surface crossing p-n junctions. Electromotive force is induced in output part of structure through semiconductor region common for both parts due to change in position of spatial charge region boundaries in input part. In order to ensure desired operating voltages, surfaces of groove walls on base region side are placed at acute angles to surface of high-voltage p-n junctions. For longitudinal grooves, this condition is provided in case of parallel walls. EFFECT: enlarged functional capabilities, improved degree of integration, reduced requirement for hardware components in semiconductor converters due to combining functions of semiconductor digital devices in one device. 6 cl, 11 dwg