LOCKABLE THYRISTOR AND METHOD OF ITS OPERATION Russian patent published in 2008 - IPC H01L29/74 

FIELD: electrical engineering.

SUBSTANCE: lockable thyristor incorporates, at least, one silicon chip made up of a set of p⁺n'Np'n⁺ cells connected in parallel. The lockable thyristor emitter junction represents a p⁺n'-transition in a thin n'-buffer layer 2 introduced into wide N-base 3 containing electronic traps with (5·10¹⁰÷5·10¹²) cm^-3 arranged at the center of silicon inhibited zone. The collector p'N-junction is effected by diffusion of aluminum with surface concentration of (10¹⁶÷10¹⁷) cm^-3 and arranged at the depth of (50÷120) mcm. The lockable thyristor cutting in is effected by sending the overvoltage pulse into power circuit in the locking, for the collector p'N-junction at the uprise rate of not less than 1.0 kV/ns, and cutting out is made by passing the current pulse via the control circuit in the direction locking for the control emitter junction.

EFFECT: increased operating frequency.

3 cl, 1 dwg