PROCESS OF MANUFACTURE OF INTEGRATED CIRCUITS Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: first layer of polycrystalline silicon and first layer of silicon oxide are applied in succession on surface of semiconductor substrate. First photolithography with etching of first layers of silicon oxide and polycrystalline silicon is conducted. Then second layer of silicon oxide is formed, reactive ion etching of second layer of silicon oxide is performed, second layer of polycrystalline silicon is applied and second photolithography with etching of second layer of polycrystalline silicon is carried out. Active regions and contacts to them are formed. After application of first layer of silicon oxide layer of silicon nitride is applied and first photolithography with etching of silicon nitride is conducted in region of contacts to base. Second layer of polycrystalline silicon is applied on surface of substrate and on silicon nitride. Second layer of polycrystalline silicon is removed beneath silicon nitride. EFFECT: increased degree of integration and speed of response of integrated circuits.