FIELD: microelectronics. SUBSTANCE: two contacting diffusion regions are formed on silicon monocrystal surface. The regions are formed by hydrolyzed polycondensation silicone oxide film application followed by diffusion annealing at 1000 - 1200 C for 0.5-2 hours. The film is applied by spin method followed by thermal destruction. The film has in the first region 5-20 mass % of deep-level anhydride diffusant impurity. On the second region a film is formed containing 5-20 mass % of shallow-level anhydride diffusant impurity. After the diffusion, the specific temperature resistance coefficient is equal to 0,08·10-3 - 0,59·10-3 in the temperature range from 20 to 150 C. EFFECT: improved quality of arrays; simplified technology. 1 tbl
