SEMICONDUCTOR ALLOYING TECHNIQUE Russian patent published in 1994 - IPC

Abstract SU 1783930 A1

FIELD: semiconductor devices and their manufacture. SUBSTANCE: admixture source is applied to silicon plate, the latter is placed on flat electrode, heated to 300-800 deg. C, and treated with corona discharge for time required to obtain desired alloying depth. EFFECT: facilitated procedure.

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SU 1 783 930 A1

Authors

Kremnev A.A.

Dates

1994-05-30—Published

1990-07-09—Filed