METHOD FOR PRODUCTION OF TEMPERATURE COMPENSATION SEMICONDUCTOR ARRAY Russian patent published in 1994 - IPC

Abstract SU 1635817 A1

FIELD: microelectronics. SUBSTANCE: two contacting diffusion regions are formed on silicon monocrystal surface. The regions are formed by doping their silicone oxide films with impurities of opposite types followed by thermal treatment at 1000 - 1200 C for 1-2 hours. The specific temperature resistance coefficient is equal to (0,049-0,4)·10^-3 deg^-1 in a wide temperature range. EFFECT: improved quality of arrays. 1 tbl

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SU 1 635 817 A1

Authors

Kremnev A.A.

Dates

1994-05-15—Published

1989-06-14—Filed