FIELD: optoelectronic engineering. SUBSTANCE: invention, in particular, relates to manufacturing silicon photoconverters with p-n barrier. Method consists in forming nonuniformly deepened barrier in semiconductor plate by double-diffusion technique. In the first step, diffusion is performed all over the plate and, in the second step, local diffusion is performed in subcontact regions through mask of niobium pentoxide film or tantalum film 0.04-0.24 mcm thick. Local diffusion is conducted at temperature no higher than 1100 C. Deposited film is used antireflecting coating. EFFECT: facilitated procedure.
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