FIELD: microelectronics. SUBSTANCE: in process of manufacture of planar p-n junctions based on indium antimonide first surface of starting plate of indium antimonide is prepared, masking silicon film is deposited by synthesis from gaseous phase, windows for local injection of impurity atoms are open in it. Then diffusion is conducted, masking film is removed and surface layer is etched off of plate. EFFECT: facilitated manufacture. 1 tbl
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