HORIZONTAL BIPOLAR TRANSISTOR MANUFACTURING PROCESS Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: transistors are built around epitaxial silicon structures with buries layer of one type of conductivity and epitaxial layer; the latter functions as passive base. Upon forming regions of side intercomponent insulation and contacts to passive base, structure surface is covered with first alloyed film of polysilicon and SiO₂-Si₃N₄ coat. Then Si^*, SiO₂, Si₃N₄ films are removed by printing method from surface beyond active base and passive-base contact regions, admixtures diffused from film Si^* by heat treatment to form active base region, structures are oxidized and subjected to reactive ion etching to remove film SiO₂ formed in the process while leaving Si₃N₄ film masked sections. Then second Si^* film is applied, its components above SiO₂-Si₃N₄ masking coat are removed by planarization method together with coat proper, opened regions of Si^* films are alloyed by admixture of opposite type of conductivity to that of epitaxial layer; in the process, epitaxial-layer contact region is masked. For final procedure, admixture is diffused from film by heat treatment to form emitter and collector regions, then first-level deposition on metal silicide base is formed. Method improves reproducibility of transistor geometry and eliminates parasitic capacitances caused by intersection of polysilicon films structures made by known procedures. EFFECT: improved speed of response of transistors, facilitated manufacture. 6 dwg