FIELD: electronic engineering. SUBSTANCE: method involves sequential coating of semiconductor plate with masking insulating layers of which at least one layer causes mechanical strain in semiconductor plate; formation of mask by photolithography, dope diffusion, followed by annealing. In shaping mask, additional photolithography is conducted to shape mask sections with two different combinations of masking insulating layers. EFFECT: facilitated procedure. 2 dwg
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Authors
Dates
1998-01-20—Published
1991-09-17—Filed