SOLID-BODY DOPING METHOD Russian patent published in 1998 - IPC

Abstract RU 2102816 C1

FIELD: electronic engineering. SUBSTANCE: method involves sequential coating of semiconductor plate with masking insulating layers of which at least one layer causes mechanical strain in semiconductor plate; formation of mask by photolithography, dope diffusion, followed by annealing. In shaping mask, additional photolithography is conducted to shape mask sections with two different combinations of masking insulating layers. EFFECT: facilitated procedure. 2 dwg

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RU 2 102 816 C1

Authors

Gorban' Aleksandr Nikolaevich[Ua]

Kravchina Vitalij Viktorovich[Ua]

Dates

1998-01-20Published

1991-09-17Filed