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Application

4492195/21, 1988-08-29

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Actual filing date

1988-08-29

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Published

1994-09-15

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Inventor

Rjabchikov А.I.Рuzyrevich А.G.Shipilov А.L.Dektjarev S.V.Кompaniets А.А.

METHOD AND DEVICE FOR ION IMPLANTATION Russian patent published in 1994 - IPC

Abstract SU 1609381 A1

FIELD: physics. SUBSTANCE: device has plasma source 1 provided with power system, system 2 for acceleration of ion beam, start pulse generator 3, pulse delay circuit 4, system 5 of detection and treatment of characteristic X-ray pulses. preamplifier 6, detector 7, isolator 8, additional isolated specimen 9, electric capacity 10, specimen 11, holder 12, top and low thresholds of voltage restrictor 13, coincidence circuit 14 and vacuum chamber 15. EFFECT: widened functional capabilities; improved of measurement. 2 cl, 3 dwg

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SU 1 609 381 A1

Authors

Rjabchikov А.I.

Рuzyrevich А.G.

Shipilov А.L.

Dektjarev S.V.

Кompaniets А.А.

Dates

1994-09-15—Published

1988-08-29—Filed

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